20N60C3 – HCH725 MOSFET
20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
P55NF06 ,50N- Channel MOSFET
P55NF06 power MOSFETs have been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. Perfect for use in various electronics projects in India, P55NF06 ,60V , 50A N-Channel Power MOSFET ensures reliability and performance. Ideal for various electronics projects, P55NF06 ,60V , 50A N-Channel Power MOSFET offers quality and performance.
48N60M2 mosfet
24N60M2 N-Channel Enhancement MOSFET
IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package
The IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits. The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.
Mosfet IRFB4110 Dip Transistor
- High Current Capacity: Supports up to 180A of continuous current, perfect for demanding applications.
- Low RDS(on): Minimizes power loss with a low on-resistance, improving efficiency.
- Fast Switching: Optimized for fast switching speeds in high-power circuits.
- TO-220 Package: Convenient DIP design for easy integration into circuit boards.
25N120ND IGBT – 1200V 25A NPT Trench IGBT
Features of 25N120 IGBT
- NPT Trench Technology, Positive Temperature Coefficient
- Extremely Enhanced Avalanche Capability
- fast reverse recovery
- low operating forward voltage
- low leakage current
Application of 25N120 IGBT
- AC drives
- DC drives and choppers
- Uninteruptible power supplies (UPS)
- switched-mode and resonant-mode power supplies
- Inductive Heaters, Inductive cookers
TP4056 1A Li-ion lithium Battery Charging Module With Current Protection – Type C
Specifications:
| Charging accuracy (%) | 1.5 |
| Charging method | Linear |
| Full Charge Voltage (V) | 4.2 |
| Over-Current Protection (A) | 3 |
| Under-Voltage Protection (V) | 2.5 |
| Input Voltage (V) | 4.5-5.5 |
| Rated Power (W) | 4.2 |
| Operating Temperature (C) | -10 to 85 |
| Length (mm) | 25 |
| Weight (gm) | 20 |
| Height (mm) | 6 |
2SC5200 and 2SA1943 MOSFET (Pair of 1)
4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW
Features
Low gate charge ( typical 16nC) Fast switching 100% avalanche tested Improved dv/dt capability Perfect for use in various electronics projects in India, 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW ensures reliability and performance. Ideal for various electronics projects, 4N60 -4A 600V- FQPF4N60 4N60 N-Channel MOSFET 600V TO-220F NEW offers quality and performance.
2N60 – 2A,600V -N-Channel Power Mosfet Low Gate Charge
FEATURES
- RDS(ON) = 3.8 at VGS = 10V.
- Ultra Low gate charge (typical 9.0nC)
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
